ty semiconductor reliability handbook (?handling SSM3J15F ? small package ? low on resistance : r on = 12 (max) (@v gs = ? 4 v) : r on = 32 (max) (@v gs = ? 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ? 30 v gate-source voltage v gss 20 v dc i d ? 100 drain current pulse i dp ? 200 ma drain power dissipation (ta = 25c) p d 200 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and met hods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm s-mini 1.1-0.1 2.90.2 1.9 +0.1 0.4-0.05 1 23 0.95 0.95 +0.2 0.16-0.06 +0.1 0.3 0~0.1 1.5-0.15 +0.25 2.5-0.3 +0.5 1.gate 2.source 3.drain weight: 0.012g(typ.) d q 1 2 3 12 3 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 ? 30 ? ? v drain cut-off current i dss v ds = ? 30 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ? 1.1 ? ? 1.7 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ? 10 ma 20 ? ? ms i d = ? 10 ma, v gs = ? 4 v ? 8 12 drain-source on resistance r ds (on) i d = ? 1 ma, v gs = ? 2.5 v ? 14 32 input capacitance c iss ? 9.1 ? pf reverse transfer capacitance c rss ? 3.5 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0, f = 1 mhz ? 8.6 ? pf turn-on time t on ? 65 ? switching time turn-off time t off v dd = ? 5 v, i d = ? 10 ma, v gs = 0~ ? 5 v ? 175 ? ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on)) please take this into consideration for using the device. v dd = ? 5 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 5v 10 s v dd out 50 r l (c) v out t on 90% 10% ? 5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit SSM3J15F smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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